| Series | GigaMOS™, TrenchT2™ |
| Package | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 235A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 715 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 47500 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 680W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 24-SMPD |
| Package / Case | 24-PowerSMD, 21 Leads |
