| Series | GigaMOS™, TrenchT2™ |
| Package | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75 V |
| Current - Continuous Drain (Id) @ 25°C | 465A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 545 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 41000 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 600W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DE475 |
| Package / Case | DE475 |
