SeriesGigaMOS™ HiPerFET™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs17mOhm @ 60A, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs255 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds19000 pF @ 25 V
FET Feature-
Power Dissipation (Max)445W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDE475
Package / CaseDE475

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