SeriesEF
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs70mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs189 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3576 pF @ 100 V
FET Feature-
Power Dissipation (Max)313W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

RELATED PRODUCT

IPW65R150CFDAFKSA1
MOSFET N-CH 650V 22.4A TO247-3
IPW90R340C3XKSA1
MOSFET N-CH 900V 15A TO247-3
IRFPC50LCPBF
MOSFET N-CH 600V 11A TO247-3
NVB110N65S3F
MOSFET N-CH 650V 30A D2PAK-3
STFW38N65M5
MOSFET N-CH 650V 30A ISOWATT
SIHG33N60E-E3
MOSFET N-CH 600V 33A TO247AC
IXFP5N100P
MOSFET N-CH 1000V 5A TO220AB
IXFA30N60X
MOSFET N-CH 600V 30A TO263
IXFQ20N50P3
MOSFET N-CH 500V 20A TO3P