SeriesHEXFET®
PackageTape & Reel (TR)
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs240 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6450 pF @ 25 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

RELATED PRODUCT

SIE802DF-T1-E3
MOSFET N-CH 30V 60A 10POLARPAK
SIE802DF-T1-GE3
MOSFET N-CH 30V 60A 10POLARPAK
FKP202
MOSFET N-CH 200V 45A TO220
IXTA100N04T2
MOSFET N-CH 40V 100A TO263
IXTA70N075T2
MOSFET N-CH 75V 70A TO263
IXTA90N055T2
MOSFET N-CH 55V 90A TO263
IXTP110N055T2
MOSFET N-CH 55V 110A TO220AB
IXTP120N04T2
MOSFET N-CH 40V 120A TO220AB
IXTA4N65X2
MOSFET N-CH 650V 4A TO263
SQC40016E_DFFR
N-CHANNEL 40-V (D-S) MOSFET