SeriesCoolMOS™ P7
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2Ohm @ 940mA, 10V
Vgs(th) (Max) @ Id3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs9 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds175 pF @ 500 V
FET Feature-
Power Dissipation (Max)24W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

RELATED PRODUCT

IPS80R2K0P7AKMA1
MOSFET N-CH 800V 3A TO251-3
DMTH4007SK3-13
MOSFET N-CH 40V 17.6A/76A TO252
DMPH4015SK3-13
MOSFET P-CHANNEL 40V 45A TO252
SIHFR430ATR-GE3
MOSFET N-CH 500V 5A DPAK
SIHFR430ATRR-GE3
MOSFET N-CH 500V 5A DPAK
SIHFR430ATRL-GE3
MOSFET N-CH 500V 5A DPAK
AOI409
MOSFET P-CH 60V 26A TO251A