Series-
PackageBulk
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs1.1Ohm @ 430mA, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.88 nC @ 4.5 V
Vgs (Max)8V
Input Capacitance (Ciss) (Max) @ Vds55 pF @ 25 V
FET Feature-
Power Dissipation (Max)100mW (Ta)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-883
Package / CaseSC-101, SOT-883

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