Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs125mOhm @ 8A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 10 V
FET Feature-
Power Dissipation (Max)1W (Ta), 30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251 (MP-3)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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