Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 70A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)+20V, -12V
Input Capacitance (Ciss) (Max) @ Vds6680 pF @ 50 V
FET Feature-
Power Dissipation (Max)275W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

RELATED PRODUCT

IPB530N15N3GATMA1
MOSFET N-CH 150V 21A D2PAK
IPB35N10S3L26ATMA1
MOSFET N-CH 100V 35A D2PAK
IRFZ44ESPBF
HEXFET POWER MOSFET
STB120N4F6
MOSFET N-CH 40V 80A D2PAK
BUK7E2R3-40E,127-NXP
PFET, 120A I(D), 40V, 0.0023OHM,
BUK764R0-75C,118-NEX
PFET, 100A I(D), 75V, 0.004OHM,
2SJ325-Z-AZ
P-CHANNEL SMALL SIGNAL MOSFET
2N7002D87Z
N-CHANNEL SMALL SIGNAL MOSFET
NTMJS1D5N04CLTWG
MOSFET N-CH 40V 38A/200A 8LFPAK
IPI50R299CPXKSA1
MOSFET N-CH 500V 12A TO262-3