Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1290 pF @ 50 V
FET Feature-
Power Dissipation (Max)98W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251
Package / CaseTO-251-3 Stub Leads, IPak

RELATED PRODUCT

BUK654R6-55C,127
PFET, 100A I(D), 55V, 0.008OHM,
BUK7E3R1-40E,127-NXP
PFET, 100A I(D), 40V, 0.0031OHM,
IRFR120TRRPBF-BE3
MOSFET N-CH 100V 7.7A DPAK
IRFR120TRLPBF-BE3
MOSFET N-CH 100V 7.7A DPAK
IPW50R280CEFKSA1
MOSFET N-CH 500V 13A TO247-3
IPB90N06S4L04ATMA1
MOSFET N-CH 60V 90A TO263-3
IRFS4615PBF
MOSFET N-CH 150V 33A D2PAK
RFP8P05
MOSFET P-CH 50V 8A TO220-3
IPP085N06LGIN
N-CHANNEL POWER MOSFET