SeriesOptiMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs10mOhm @ 40A, 10V
Vgs(th) (Max) @ Id3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2410 pF @ 40 V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-111
Package / CaseTO-220-3 Full Pack

RELATED PRODUCT

IPD70P04P4L08ATMA2
MOSFET P-CH 40V 70A TO252-3
IPD70P04P4L08ATMA1
MOSFET P-CH 40V 70A TO252-3
IPD70P04P409ATMA2
MOSFET P-CH 40V 73A TO252-3
SPP80N06S2L-09
MOSFET N-CH 55V 80A TO220-3
RM130N100T2
MOSFET N-CH 100V 130A TO220-3
RM5N800LD
MOSFET N-CHANNEL 800V 5A TO252-2
RM170N30DF
MOSFET N-CHANNEL 30V 170A 8DFN
RM5N800IP
MOSFET N-CHANNEL 800V 5A TO251
IRFR1010ZTRPBF
MOSFET N-CH 55V 42A DPAK