SeriesQFET®
PackageBulk
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400 V
Current - Continuous Drain (Id) @ 25°C1.56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.5Ohm @ 780mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 38W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

RELATED PRODUCT

PH3830L,115
MOSFET N-CH 30V 98A LFPAK56
2SK1485-AZ
SMALL SIGNAL N-CHANNEL MOSFET
IRFD122
SMALL SIGNAL N-CHANNEL MOSFET
BSP299L6327
SMALL-SIGNAL N-CHANNEL MOSFET
2SJ208-AZ
P-CHANNEL POWER MOSFET
RM78N100LD
MOSFET N-CH 100V 78A TO252-2
RM110N82T2
MOSFET N-CH 82V 110A TO220-3
RM24N200TI
MOSFET N-CHANNEL 220V 24A TO220F
NVD5863NLT4G
13A, 60V, 0.011OHM, N-CHANNEL,