| Series | HEXFET® |
| Package | Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 15A, 4.5V |
| Vgs(th) (Max) @ Id | 1.9V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 2.49 pF @ 6 V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
