SeriesTrenchMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C11.8A (Tj)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17.6 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1.335 pF @ 16 V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

RELATED PRODUCT

FDT434P
6A, 20V, 0.05OHM, P-CHANNEL, MO
SPP08P06PHXKSA1
8.8A, 60V, 0.3OHM, P-CHANNEL, M
IRLR3410PBF
HEXFET POWER MOSFET
PHK12NQ03LT,518-NEX
POWER FIELD-EFFECT TRANSISTOR, 1
BUK9Y25-80E,115
MOSFET N-CH 80V 37A LFPAK56
RV4E031RPHZGTCR1
MOSFET P-CH 30V 3.1A DFN1616-6W
BSP297L6327HTSA1
MOSFET N-CH 200V 660MA SOT223-4