Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1.316 pF @ 15 V
FET Feature-
Power Dissipation (Max)55W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DFN3333 (3.3x3.3)
Package / Case8-VDFN Exposed Pad

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