SeriesOptiMOS™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs21.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds2.26 pF @ 25 V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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