SeriesOptiMOS™
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds1.56 pF @ 25 V
FET Feature-
Power Dissipation (Max)36W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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