SeriesOptiMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs30mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.2V @ 8µA
Gate Charge (Qg) (Max) @ Vgs16.3 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds1.22 pF @ 25 V
FET Feature-
Power Dissipation (Max)29W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-11
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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