Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C14.5A (Ta), 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Rds On (Max) @ Id, Vgs4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4.49 pF @ 12 V
FET Feature-
Power Dissipation (Max)1.43W (Ta), 93.75W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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