| Series | G2R™ |
| Package | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 2mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | +20V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 139 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 53W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
