SeriesHTMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs400mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs4.3 nC @ 5 V
Vgs (Max)10V
Input Capacitance (Ciss) (Max) @ Vds290 pF @ 28 V
FET Feature-
Power Dissipation (Max)50W (Tj)
Operating Temperature-55°C ~ 225°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package4-Power Tab
Package / Case4-SIP

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