SeriesDTMOSIV
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C11.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs390mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 450µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds890 pF @ 300 V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack

RELATED PRODUCT

IPP60R280P7XKSA1
MOSFET N-CH 600V 12A TO220-3
STP110N10F7
MOSFET N CH 100V 110A TO-220
FQPF27N25
MOSFET N-CH 250V 14A TO220F
FQPF65N06
MOSFET N-CH 60V 40A TO220F
IXTP60N10T
MOSFET N-CH 100V 60A TO220AB
IRFBF20PBF
MOSFET N-CH 900V 1.7A TO220AB
IRFI510GPBF
MOSFET N-CH 100V 4.5A TO220-3
IRL1404ZPBF
MOSFET N-CH 40V 75A TO220AB
FCPF11N60
MOSFET N-CH 600V 11A TO220F
IRFB3307PBF
MOSFET N-CH 75V 130A TO220AB