SeriesDTMOSIV
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs18mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs360 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds15000 pF @ 30 V
FET FeatureSuper Junction
Power Dissipation (Max)797W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P(L)
Package / CaseTO-3PL

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