Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs540mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds180 pF @ 25 V
FET Feature-
Power Dissipation (Max)43W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

RELATED PRODUCT

FQP8P10
MOSFET P-CH 100V 8A TO220-3
FQP13N10
MOSFET N-CH 100V 12.8A TO220-3
STP25N10F7
MOSFET N-CH 100V 25A TO220
FQP3N30
MOSFET N-CH 300V 3.2A TO220-3
TN0610N3-G
MOSFET N-CH 100V 500MA TO92-3
FDB3682
MOSFET N-CH 100V 6A/32A TO263
FQP4N20L
MOSFET N-CH 200V 3.8A TO220-3
IPP055N03LGXKSA1
MOSFET N-CH 30V 50A TO220-3
IRF9520NPBF
MOSFET P-CH 100V 6.8A TO220AB
IRF530A
MOSFET N-CH 100V 14A TO220-3