Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs4.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs220 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds12.5 pF @ 20 V
FET Feature-
Power Dissipation (Max)1.65W (Ta), 90W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

RELATED PRODUCT

IPB108N15N3GATMA1
MOSFET N-CH 150V 83A D2PAK
IPB60R120C7ATMA1
MOSFET N-CH 650V 19A TO263-3
IRF9230
200V, P-CHANNEL REPETITIVE AVALA
FDP8030L
MOSFET N-CH 30V 80A TO220-3
IPL60R125C7AUMA1
MOSFET N-CH 600V 17A 4VSON
AUIRFP4568-E
MOSFET N-CH 150V 171A TO247AD
IPT029N08N5ATMA1
MOSFET N-CH 80V 52A/169A HSOF-8
IPB073N15N5ATMA1
MOSFET N-CH 150V 114A TO263-3