SeriesCoolMOS™ P7
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs99mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id4V @ 530µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1.952 pF @ 400 V
FET Feature-
Power Dissipation (Max)117W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-4
Package / CaseTO-247-4

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