SeriesCoolMOS™ C7
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs95mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2.14 pF @ 400 V
FET Feature-
Power Dissipation (Max)34W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-FP
Package / CaseTO-220-3 Full Pack

RELATED PRODUCT

IRFS4310PBF
MOSFET N-CH 100V 130A D2PAK
FCP25N60N-F102
MOSFET N-CH 600V 25A TO220-3
AUIRFP4409
MOSFET N-CH 300V 38A TO247AC
IRF7749L2TRPBF
IRF7749 - 12V-300V N-CHANNEL POW
IPB020NE7N3G
IPB020NE7 - 12V-300V N-CHANNEL P
IRF7769L2TRPBF
IRF7769 - 12V-300V N-CHANNEL POW
IQE006NE2LM5CGATMA1
MOSFET N-CH 25V 41A/298A IPAK
IQE006NE2LM5ATMA1
MOSFET N-CH 25V 41A/298A 8TSON
FDB024N04AL7
MOSFET N-CH 40V 100A TO263-7
FQA24N60
POWER FIELD-EFFECT TRANSISTOR, 2