SeriesOptiMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs172 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5.3 pF @ 25 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

RELATED PRODUCT

NVMFS5C404NLT1G
MOSFET N-CH 40V 49A/352A 5DFN
FDP16AN08A0
POWER FIELD-EFFECT TRANSISTOR, 9
AUIRF1405ZS-7TRL
MOSFET N-CH 55V 120A D2PAK
AUIRFS3306TRL
MOSFET N-CH 60V 120A D2PAK
IPB100N04S2-04
IPB100N04 - 20V-40V N-CHANNEL AU
FDMC2512SDC
POWER FIELD-EFFECT TRANSISTOR, 3
IPP024N06N3G
POWER FIELD-EFFECT TRANSISTOR, 1
ISZ019N03L5SATMA1
MOSFET N-CH 30V 22A/40A TSDSON
IRF430
500V, N-CHANNEL REPETITIVE AVALA
IRLR7843TRLPBF
MOSFET N-CH 30V 161A DPAK