SeriesHiPerFET™, Polar3™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs265mOhm @ 13A, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2220 pF @ 25 V
FET Feature-
Power Dissipation (Max)180W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

RELATED PRODUCT

IRFPS38N60LPBF
MOSFET N-CH 600V 38A SUPER247
C3M0025065D
GEN 3 650V 25 M SIC MOSFET
STW60NM50N
MOSFET N-CH 500V 68A TO247
STW69N65M5
MOSFET N-CH 650V 58A TO247
NTBG020N090SC1
SICFET N-CH 900V 9.8A/112A D2PAK
STY100NM60N
MOSFET N CH 600V 98A MAX247
STY50N105DK5
MOSFET N-CH 1050V 44A MAX247
IXTH3N200P3HV
MOSFET N-CH 2000V 3A TO247
IXFX32N100Q3
MOSFET N-CH 1000V 32A PLUS247-3
SCTH90N65G2V-7
SICFET N-CH 650V 90A H2PAK-7