Series-
PackageBulk
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C750mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs900mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 25 V
FET Feature-
Power Dissipation (Max)360mW (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-39
Package / CaseTO-205AD, TO-39-3 Metal Can

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