SeriesMDmesh™ V
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs62.5 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 100 V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

RELATED PRODUCT

STB75NF20
MOSFET N-CH 200V 75A D2PAK
IXTH450P2
MOSFET N-CH 500V 16A TO247
STF35N60DM2
MOSFET N-CH 600V 28A TO220FP
SIHH14N60EF-T1-GE3
MOSFET N-CH 600V 15A PPAK 8 X 8
SQJ456EP-T1_GE3
MOSFET N-CH 100V 32A PPAK SO-8
R6035KNZ1C9
MOSFET N-CHANNEL 600V 35A TO247
STF34NM60N
MOSFET N-CH 600V 31.5A TO220FP
STF32NM50N
MOSFET N CH 500V 22A TO-220FP
STB34N65M5
MOSFET N-CH 650V 28A D2PAK
STB36NM60ND
MOSFET N-CH 600V 29A D2PAK