SeriesOptiMOS™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs3.7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id3.5V @ 155µA
Gate Charge (Qg) (Max) @ Vgs117 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8110 pF @ 40 V
FET Feature-
Power Dissipation (Max)41W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-FP
Package / CaseTO-220-3 Full Pack

RELATED PRODUCT

STFI20NK50Z
MOSFET N-CH 500V 17A I2PAKFP
IRFS9N60ATRLPBF
MOSFET N-CH 600V 9.2A D2PAK
SIHF15N65E-GE3
MOSFET N-CH 650V 15A TO220
CDM22012-800LRFP SL
MOSFET N-CH 800V 12A TO220FP
STB11NM60T4
MOSFET N-CH 650V 11A D2PAK
STB13N80K5
MOSFET N-CH 800V 12A D2PAK
STFI20N65M5
MOSFET N CH 650V 18A I2PAKFP
SIHH14N60E-T1-GE3
MOSFET N-CH 600V 16A PPAK 8 X 8
FDMS86152
MOSFET N-CH 100V 14A/45A POWER56
R6018JNJGTL
MOSFET N-CH 600V 18A LPTS