SeriesMDmesh™ II Plus
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds580 pF @ 100 V
FET Feature-
Power Dissipation (Max)25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAKFP (TO-281)
Package / CaseTO-262-3 Full Pack, I²Pak

RELATED PRODUCT

SQM35N30-97_GE3
MOSFET N-CH 300V 35A TO263
IXFA12N50P
MOSFET N-CH 500V 12A TO263
STP200NF04
MOSFET N-CH 40V 120A TO220AB
STH260N6F6-6
MOSFET N-CH 60V 180A H2PAK-6
STB35N65DM2
MOSFET N-CH 650V 28A D2PAK
STF20NK50Z
MOSFET N-CH 500V 17A TO220FP
SUM90N03-2M2P-E3
MOSFET N-CH 30V 90A TO263
SUM90142E-GE3
MOSFET N-CH 200V 90A TO263
R5013ANXFU6
MOSFET N-CH 500V 13A TO220FM
PSMNR70-40SSHJ
MOSFET N-CH 40V 425A LFPAK88