SeriesSuperMESH3™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)620 V
Current - Continuous Drain (Id) @ 25°C4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.6Ohm @ 2.1A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds680 pF @ 50 V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

RELATED PRODUCT

RD3U080CNTL1
MOSFET N-CH 250V 8A TO252
STD14NM50NAG
MOSFET N-CH 500V 12A DPAK
STD3NK100Z
MOSFET N-CH 1000V 2.5A DPAK
STD12N60DM2AG
AUTOMOTIVE-GRADE N-CHANNEL 600 V
RS1L120GNTB
MOSFET N-CH 60V 12A/36A 8HSOP
FDMS7572S
MOSFET N-CH 25V 23A/49A 8PQFN
FDD2572
MOSFET N-CH 150V 4A/29A TO252AA
SI7322DN-T1-E3
MOSFET N-CH 100V 18A PPAK 1212-8
TSM3N90CH C5G
MOSFET N-CH 900V 2.5A TO251