SeriesHEXFET®
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C140A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4010 pF @ 15 V
FET Feature-
Power Dissipation (Max)140W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

RELATED PRODUCT

IRFR024TRLPBF
MOSFET N-CH 60V 14A DPAK
RS1E281BNTB1
MOSFET N-CH 30V 28A/80A 8HSOP
STD5NK60ZT4
MOSFET N-CH 600V 5A DPAK
SQJ848EP-T1_GE3
MOSFET N-CH 40V 47A PPAK SO-8
SQD50N04-5M6_GE3
MOSFET N-CH 40V 50A TO252AA
RS1E301GNTB1
MOSFET N-CH 30V 30A/80A 8HSOP
STD12N50DM2
MOSFET N-CH 500V 11A DPAK
RS1E350BNTB
MOSFET N-CH 30V 35A 8HSOP