SeriesMDmesh™ M2
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 100 V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageIPAK (TO-251)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

RELATED PRODUCT

SIR873DP-T1-GE3
MOSFET P-CH 150V 37A PPAK SO-8
STD13N65M2
MOSFET N-CH 650V 10A DPAK
STU6N62K3
MOSFET N-CH 620V 5.5A IPAK
SI7892BDP-T1-GE3
MOSFET N-CH 30V 15A PPAK SO-8
SIR165DP-T1-GE3
MOSFET P-CH 30V 60A PPAK SO-8
SQD100N03-3M4_GE3
MOSFET N-CH 30V 100A TO252AA
SI4455DY-T1-GE3
MOSFET P-CH 150V 2A 8SO
SQD100N04-3M6_GE3
MOSFET N-CH 40V 100A TO252AA
RD3P130SPFRATL
MOSFET P-CH 100V 13A TO252