SeriesSuperMESH™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.7Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds310 pF @ 25 V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

RELATED PRODUCT

PSMN1R4-40YLDX
MOSFET N-CH 40V 100A LFPAK56
STS10P3LLH6
MOSFET P-CH 30V 10A 8SO
SISS32DN-T1-GE3
MOSFET N-CH 80V 17.4A/63A PPAK
FDMC2D8N025S
MOSFET N-CH 25V 124A POWER33
STB60NF06T4
MOSFET N-CH 60V 60A D2PAK
STB60NF06LT4
MOSFET N-CH 60V 60A D2PAK
STD80N4F6
MOSFET N-CH 40V 80A DPAK
DMT6010LSS-13
MOSFET N-CH 60V 14A 8SO T&R 2
SQ4435EY-T1_GE3
MOSFET P-CHANNEL 30V 15A 8SOIC