SeriesSuperMESH3™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)525 V
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.6Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds334 pF @ 100 V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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