SeriesSuperMESH3™
PackageCut Tape (CT)Tape & Box (TB)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs9.5 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 50 V
FET Feature-
Power Dissipation (Max)3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

RELATED PRODUCT

STD19N3LLH6AG
MOSFET N-CH 30V 10A DPAK
PMZB350UPE,315
MOSFET P-CH 20V 1A DFN1006B-3
PMZB320UPEYL
MOSFET P-CH 30V 1A DFN1006B-3
PMF170XP,115
MOSFET P-CH 20V 1A SOT323
PMV90ENER
MOSFET N-CHANNEL 30V 3A TO236AB
XP231P0201TR-G
MOSFET P-CH 30V 200MA SOT23
SI4776DY-T1-GE3
MOSFET N-CHANNEL 30V 11.9A 8SO