SeriesHiPerFET™, PolarP2™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs220mOhm @ 22A, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs305 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds19000 pF @ 25 V
FET Feature-
Power Dissipation (Max)1250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS264™
Package / CaseTO-264-3, TO-264AA

RELATED PRODUCT

IXFN32N100P
MOSFET N-CH 1000V 27A SOT-227B
NTE2392
MOSFET N-CHANNEL 100V 40A TO3
G3R20MT12K
SIC MOSFET N-CH 128A TO247-4
IXTK22N100L
MOSFET N-CH 1000V 22A TO264
SCH2080KEC
SICFET N-CH 1200V 40A TO247
UF3SC120016K3S
SICFET N-CH 1200V 107A TO247-3
NEM090603M-28-A
N-CHANNEL POWER MOSFET
NTE2386
MOSFET N-CHANNEL 600V 6.2A TO3