SeriesPOWER MOS 8™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.1Ohm @ 7A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs145 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4765 pF @ 25 V
FET Feature-
Power Dissipation (Max)625W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD3PAK
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

RELATED PRODUCT

MSC060SMA070B4
TRANS SJT N-CH 700V 39A TO247-4
R6025JNZ4C13
MOSFET N-CH 600V 25A TO247G
NTE2399
MOSFET N-CHANNEL 1KV 3.1A TO220
NTE2930
MOSFET N-CHANNEL 100V 31A TO3PML
IXTH24N50
MOSFET N-CH 500V 24A TO247
2SK4222
MOSFET N-CH 600V 23A TO3PB
NVHL160N120SC1
TRANS SJT N-CH 1200V 17A TO247-3
STP30N65M5
MOSFET N-CH 650V 22A TO220AB
TP65H070LSG-TR
GANFET N-CH 650V 25A PQFN88
UJ4C075060K3S
SICFET N-CH 750V 28A TO247-3