Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs182mOhm @ 12.5A, 15V
Vgs(th) (Max) @ Id7V @ 4.5mA
Gate Charge (Qg) (Max) @ Vgs57 nC @ 15 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 100 V
FET Feature-
Power Dissipation (Max)85W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FM
Package / CaseTO-220-3 Full Pack

RELATED PRODUCT

SIHG068N60EF-GE3
MOSFET N-CH 600V 41A TO247AC
STP42N60M2-EP
MOSFET N-CH 600V 34A TO220
NTE2946
MOSFET-PWR N-CHAN ENHAN
NTE66
MOSFET N-CHANNEL 100V 14A TO220
RFM10N50
N-CHANNEL POWER MOSFET
MTW24N40E
N-CHANNEL POWER MOSFET
IPP60R125CPXKSA1
MOSFET N-CH 650V 25A TO220-3
IXFH28N60P3
MOSFET N-CH 600V 28A TO247AD
IRFAF52
N-CHANNEL HERMETIC MOS HEXFET