SeriesOptiMOS™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C79A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs3mOhm @ 79A, 10V
Vgs(th) (Max) @ Id3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs206 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14800 pF @ 50 V
FET Feature-
Power Dissipation (Max)41W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-FP
Package / CaseTO-220-3 Full Pack

RELATED PRODUCT

IXTP34N65X2
MOSFET N-CH 650V 34A TO220AB
2SK1464
N-CHANNEL POWER MOSFET
MTY25N60E
N-CHANNEL POWER MOSFET
STW19NM50N
MOSFET N-CH 500V 14A TO247-3
3N187
N-CHANNEL POWER MOSFET
C3M0120090D
SICFET N-CH 900V 23A TO247-3
STW38N65M5
MOSFET N-CH 650V 30A TO247
NTE2931
MOSFET N-CH 200V 12.8A TO3PML
MSC360SMA120S
MOSFET SIC 1200 V 360 MOHM TO-26
STP21N65M5
MOSFET N-CH 650V 17A TO220AB