SeriesQFET®
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs105mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds5.6 pF @ 25 V
FET Feature-
Power Dissipation (Max)310W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

RELATED PRODUCT

SIHP21N60EF-BE3
MOSFET N-CH 600V 21A TO220AB
FQA28N50F
MOSFET N-CH 500V 28.4A TO3P
STL47N60M6
MOSFET N-CH 600V 31A PWRFLAT HV
2SJ554-90-E
P-CHANNEL POWER MOSFET
IRFP362
N-CHANNEL POWER MOSFET
STP190N55LF3
MOSFET N-CH 55V 120A TO220-3
IPDD60R080G7XTMA1
MOSFET N-CH 600V 29A HDSOP-10
STP23N80K5
MOSFET N-CH 800V 16A TO220-3
STP20NM50
MOSFET N-CH 500V 20A TO220AB
STF9NK90Z
MOSFET N-CH 900V 8A TO220FP