SeriesSuperMESH3™
PackageTube
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1050 V
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds180 pF @ 100 V
FET Feature-
Power Dissipation (Max)20W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOWATT-218FX
Package / CaseISOWATT218FX

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