Series-
PackageBag
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900 V
Current - Continuous Drain (Id) @ 25°C4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.7Ohm @ 3.25A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 30 V
FET Feature-
Power Dissipation (Max)2W (Ta), 37W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FI(LS)
Package / CaseTO-220-3 Full Pack

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