Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs33mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs73 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 20 V
FET Feature-
Power Dissipation (Max)1.65W (Ta), 65W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageSMP
Package / CaseTO-220-3, Short Tab

RELATED PRODUCT

BFL4007
MOSFET N-CH 600V 14/8.7A TO220FI
2SJ606-ZK-E1-AY
P-CHANNEL SWITCHING POWER MOSFET
2SJ606-Z-AZ
P-CHANNEL SWITCHING POWER MOSFET
IPP80N06S2L07AKSA2
MOSFET N-CH 55V 80A TO220-3
FCPF21N60NT
1-ELEMENT, N-CHANNEL
FCPF20N60ST
20A, 600V, 0.19OHM, N CHANNEL ,
FQA18N50V2
MOSFET N-CH 500V 20A TO3P
2SJ216-E
P-CHANNEL SMALL SIGNAL MOSFET
STF20N65M5
MOSFET N-CH 650V 18A TO220FP
2SK3162-91-E
N-CHANNEL POWER MOSFET