SeriesCoolMOS™PFD7
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id4.5V @ 390µA
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1503 pF @ 400 V
FET Feature-
Power Dissipation (Max)32W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220 Full Pack
Package / CaseTO-220-3 Full Pack

RELATED PRODUCT

SIHA15N80AE-GE3
MOSFET N-CH 800V 6A TO220
2SJ330-AZ
P-CHANNEL POWER MOSFET
IRFP440
MOSFET N-CH 500V 8.8A TO247-3
2SJ329(05)-S5-AZ
P-CHANNEL POWER MOSFET
BUZ323
N-CHANNEL POWER MOSFET
SIHP15N80AE-GE3
MOSFET N-CH 800V 13A TO220AB
2SK3140-E
N-CHANNEL POWER MOSFET
IRFF111
N-CHANNEL POWER MOSFET
FDP14AN06LA0
MOSFET N-CH 60V 10A/67A TO220-3
FQH18N50V2
MOSFET N-CH 500V 20A TO247-3