Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs31mOhm @ 25A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs74 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 10 V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 84W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

RELATED PRODUCT

RJL5014DPP-00#T2
N-CHANNEL POWER MOSFET
2SK1157-E
N-CHANNEL POWER MOSFET
SPW20N60C3E8177FKSA1
COOLMOS N-CHANNEL POWER MOSFET
IPDD60R125CFD7XTMA1
MOSFET N-CH 600V 27A HDSOP-10
AUIRFS4010-7TRL
MOSFET N-CH 100V 180A TO263
RF1S640SM
MOSFET N-CH 200V 18A TO263AB
IPI65R110CFD
N-CHANNEL POWER MOSFET
IPP052NE7N3GXKSA1
MOSFET N-CH 75V 80A TO220-3
2SK4088LS
MOSFET N-CH 650V 7.5A TO220FI