SeriesHEXFET®
PackageBulk
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C5.5A
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET FeatureStandard
Power Dissipation (Max)75W
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageTO-204AE
Package / CaseTO-204AE

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